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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION *Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A *High DC Current Gain : hFE= 2000(Min) @ IC= 3A *Complement to Type 2SB1099 APPLICATIONS *Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICP Collector Current-Continuous w ww scs .i VALUE 150 V 100 V 7 V 8 A 12 A 0.8 A 2 W UNIT .cn mi e Collector Current-Pulse IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 25 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1590 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V A ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 3A; VCE= 2V 2000 15000 hFE -2 DC Current Gain IC= 5A; VCE= 2V Switching times ton Turn-on Time tstg Storage Time tf Fall Time w w L scs .i w IC= 3A, IB1= -IB2= 3mA; RL= 16.7; VCC 50V .cn mi e 500 1.0 s 3.5 s 1.2 s hFE-1 Classifications M 2000-5000 K 5000-15000 3000-7000 isc Websitewww.iscsemi.cn 2 |
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